Mg₂Si thermoelectric device fabrication with reused-silicon

抄録

Mg₂Si thermoelectric devices are fabricated using reused-Si by a liquid–solid phase reaction and a spark plasma sintering process. Seebeck coefficients are comparable to those for a device prepared with pure Si. However electric conductivities are lower, resulting in lower power factors. Al-doping up to 4% is found to be effective to improve the electrical conductivity.