主催: The Japan Society of Applied Physics
会議名: International Conference and Summer School on Advanced Silicide Technology 2014
開催地: Tokyo, Japan
開催日: 2014/07/19 - 2014/07/21
In this paper we introduce amorphous hydrogenated silicon thin films (a-Si:H) deposited by PECVD with embedded magnesium silicide (Mg2Si) nanoparticles (NPs) which are created by reactive laser ablation (RLA) of Mg target in low pressure of silane (SiH4). Both techniques are periodically changed in short intervals–each of the monolayers of Mg2Si NPs is covered by thin a-Si:H film. The physical characteristics of those films are studied not only on high quality optical substrates but in diode structures too. As a final result we introduce the voltage dependence of the electroluminescence of deposited diodes.