Effect of grain areas on minority-carrier lifetime in undoped n-type BaSi2 on Si(111)

Ryota Takabe; Kosuke O. Hara; Masakazu Baba; Weijie Du; Naoya Shimada; Kaoru Toko; Noritaka Usami; Takashi Suemasu

doi:10.56646/jjapcp.3.0_011401

International Conference and Summer School on Advanced Silicide Technology 2014

Session ID : 011401

DOI https://doi.org/10.56646/jjapcp.3.0_011401

Conference information

Host: The Japan Society of Applied Physics

Name : International Conference and Summer School on Advanced Silicide Technology 2014

Location : Tokyo, Japan

Date : July 19, 2014 - July 21, 2014

Photovoltaic materials

Effect of grain areas on minority-carrier lifetime in undoped n-type BaSi₂ on Si(111)

Ryota Takabe, Kosuke O. Hara, Masakazu Baba, Weijie Du, Naoya Shimada, Kaoru Toko, Noritaka Usami, Takashi Suemasu

Author information

Ryota Takabe
University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573, Japan
Kosuke O. Hara
Nagoya University, Nagoya 464-8603, Japan
Masakazu Baba
University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573, Japan
Weijie Du
University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573, Japan
Naoya Shimada
University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573, Japan
Kaoru Toko
University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573, Japan
Noritaka Usami
Nagoya University, Nagoya 464-8603, Japan
JST-CREST, Chiyoda, Tokyo 102-0075, Japan
Takashi Suemasu
University of Tsukuba, Institute of Applied Physics, Tsukuba, Ibaraki 305-8573, Japan
JST-CREST, Chiyoda, Tokyo 102-0075, Japan

CONFERENCE PROCEEDINGS OPEN ACCESS

Details

Abstract

We have grown undoped n-BaSi₂ epitaxial films with different grain sizes on Si(111) and characterized their minority-carrier lifetime, τ. We found that τ value in undoped n-BaSi₂ did not depend on average grain area, but on surface condition. The samples with mirror surfaces had large τ of about 0.4 µs and those with cloudy surface small τ of about 8 µs. We tried to cap the sample surface in situ with a 3 nm Ba or Si layer in order to control the surface of BaSi₂, and succeeded to intentionally form BaSi₂ with large τ.

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