Investigation of surface potential distributions of phosphorus-doped n-BaSi2 thin-films by Kelvin probe force microscopy

Daichi Tsukahara; Masakazu Baba; Ryota Takabe; Kaoru Toko; Takashi Suemasu

doi:10.56646/jjapcp.3.0_011403

International Conference and Summer School on Advanced Silicide Technology 2014

セッションID: 011403

DOI https://doi.org/10.56646/jjapcp.3.0_011403

会議情報

主催: The Japan Society of Applied Physics

会議名: International Conference and Summer School on Advanced Silicide Technology 2014

開催地: Tokyo, Japan

開催日: 2014/07/19 - 2014/07/21

Photovoltaic materials

Investigation of surface potential distributions of phosphorus-doped n-BaSi₂ thin-films by Kelvin probe force microscopy

Daichi Tsukahara, Masakazu Baba, Ryota Takabe, Kaoru Toko, Takashi Suemasu

著者情報

会議録・要旨集オープンアクセス

詳細

抄録

We investigated the surface potential distributions around grain boundaries (GBs) in phosphorus (P)-doped n-BaSi₂ thin-films by Kelvin probe force microscopy (KFM) and the crystal planes constituting GBs by transmission electron microscopy (TEM). By KFM measurements, it was found that the GBs in P-doped n-BaSi₂ are different from those in undoped BaSi₂; undoped n-BaSi₂ has a downward band bending around the GBs with barrier heights of approximately 30 meV. In contrast, P-doped n-BaSi₂ has an upward band bending with barrier heights of approximately 15 meV. TEM observation revealed that most of the GBs in P-doped BaSi₂ are composed of BaSi₂ (011)/() planes. This result is the same as that in undoped BaSi₂.

責任著者(Corresponding author)

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