Fabrication of spin valve junctions based on Fe3Si/FeSi2/Fe3Si trilayered films

Yuki Asai; Ken-ichiro Sakai; Kazuya Ishibashi; Kaoru Takeda; Tsuyoshi Yoshitake

doi:10.56646/jjapcp.3.0_011501

International Conference and Summer School on Advanced Silicide Technology 2014

Session ID : 011501

DOI https://doi.org/10.56646/jjapcp.3.0_011501

Conference information

Host: The Japan Society of Applied Physics

Name : International Conference and Summer School on Advanced Silicide Technology 2014

Location : Tokyo, Japan

Date : July 19, 2014 - July 21, 2014

Spintronics materials

Fabrication of spin valve junctions based on Fe₃Si/FeSi₂/Fe₃Si trilayered films

Yuki Asai, Ken-ichiro Sakai, Kazuya Ishibashi, Kaoru Takeda, Tsuyoshi Yoshitake

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CONFERENCE PROCEEDINGS OPEN ACCESS

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Abstract

Fe₃Si/FeSi₂/Fe₃Si trilayered junctions were prepared on Si(111) by facing targets direct-current sputtering combined with a mask method, and spin valve signals in current-perpendicular-to-plane (CPP) geometry was investigated for the change of the magnetization alignment. The shape of magnetization curves evidently exhibited that an antiparallel alignment is realized owing to a difference in the coercive force between the top and bottom Fe₃Si layers. The electrical resistance was alternately changed for the formation of parallel and antiparallel alignments with the magnetic field. The spin valve signals in the Fe₃Si/FeSi₂/Fe₃Si trilayered junctions were experimentally demonstrated.

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