Current-induced magnetization switching at low current densities in current-perpendicular-to-plane structural Fe3Si/FeSi2 artificial lattices with various cross-sectional areas

Ken-ichiro Sakai; Yūki Asai; Yūta Noda; Takeshi Daio; Aki Tominaga; Kaoru Takeda; Tsuyoshi Yoshitake

doi:10.56646/jjapcp.3.0_011502

International Conference and Summer School on Advanced Silicide Technology 2014

Session ID : 011502

DOI https://doi.org/10.56646/jjapcp.3.0_011502

Conference information

Host: The Japan Society of Applied Physics

Name : International Conference and Summer School on Advanced Silicide Technology 2014

Location : Tokyo, Japan

Date : July 19, 2014 - July 21, 2014

Spintronics materials

Current-induced magnetization switching at low current densities in current-perpendicular-to-plane structural Fe₃Si/FeSi₂ artificial lattices with various cross-sectional areas

Ken-ichiro Sakai, Yūki Asai, Yūta Noda, Takeshi Daio, Aki Tominaga, Kaoru Takeda, Tsuyoshi Yoshitake

Author information

Ken-ichiro Sakai
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Department of Control and Information Systems Engineering, Kurume National College of Technology, Kurume, Fukuoka 830-8555, Japan
Yūki Asai
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Yūta Noda
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Takeshi Daio
International Research Center for Hydrogen Energy, Kyushu University, Fukuoka 819-0395, Japan
Aki Tominaga
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Kaoru Takeda
Department of Electrical Engineering, Fukuoka Institute of Technology, Fukuoka 811-0295, Japan
Tsuyoshi Yoshitake
Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

CONFERENCE PROCEEDINGS OPEN ACCESS

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Abstract

Current-perpendicular-to-plane junctions with different cross-sectional areas were fabricated from Fe₃Si/FeSi₂ artificial lattice films, wherein antiferromagnetic interlayer coupling was induced across the FeSi₂ spacer layers, by employing a focused ion beam (FIB) apparatus. Evident hysteresis loops in the electrical resistance for current injection due to current-induced magnetization switching (CIMS) were observed. The average value of critical current densities for inducing CIMS was 2 × 10² A/cm², which is at least three orders of magnitude smaller than values that have ever been reported. This might be because CIMS in our junctions is induced by the destruction of the AF interlayer coupling, which differs from the general mechanism of CIMS.

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