Current-induced magnetization switching at low current densities in current-perpendicular-to-plane structural Fe₃Si/FeSi₂ artificial lattices with various cross-sectional areas

抄録

Current-perpendicular-to-plane junctions with different cross-sectional areas were fabricated from Fe₃Si/FeSi₂ artificial lattice films, wherein antiferromagnetic interlayer coupling was induced across the FeSi₂ spacer layers, by employing a focused ion beam (FIB) apparatus. Evident hysteresis loops in the electrical resistance for current injection due to current-induced magnetization switching (CIMS) were observed. The average value of critical current densities for inducing CIMS was 2 × 10² A/cm², which is at least three orders of magnitude smaller than values that have ever been reported. This might be because CIMS in our junctions is induced by the destruction of the AF interlayer coupling, which differs from the general mechanism of CIMS.