Fabrication of Mg₂Si pn-junction photodiode with shallow mesa-structure and ring electrode

抄録

We fabricated Mg₂Si pn-juncion photodiodes with a shallow mesa structure and a ring electrode using a conventional photolithography process and investigated their electrical and optical character. Dark current densities of about 0.18 and 9 × 10⁻⁴ A/cm² were obtained at room temperature and 100 K under the reverse bias at −3 V. Photoresponse below about 2.1 µm was observed in the shallow mesa-type PDs at room temperature operation. The photosensitivity at 1.31 µm was determined about 22 and 42 mA/W for the bias voltage at 0 and −0.1 V, respectively.