Realization of crystalline BaSi2 thin films by vacuum evaporation on (111)-oriented Si layers fabricated by aluminum induced crystallization

Jefferson A. Wibowo; Isao Takahashi; Kosuke O. Hara; Noritaka Usami

doi:10.56646/jjapcp.5.0_011201

Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)

Session ID : 011201

DOI https://doi.org/10.56646/jjapcp.5.0_011201

Conference information

Host: The Japan Society of Applied Physics

Name : Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)

Location : Fukuoka, Japan

Date : July 16, 2016 - July 18, 2016

Photovltaic materials

Realization of crystalline BaSi₂ thin films by vacuum evaporation on (111)-oriented Si layers fabricated by aluminum induced crystallization

Jefferson A. Wibowo, Isao Takahashi, Kosuke O. Hara, Noritaka Usami

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CONFERENCE PROCEEDINGS OPEN ACCESS

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Abstract

We have realized single phase crystalline BaSi₂ thin films on quartz substrate by vacuum evaporation for solar cell applications. This structure is achieved by introducing (111)-oriented poly-Si fabricated by aluminum induced crystallization as a supply layer prior to BaSi₂ deposition. Raman measurements showed five characteristic peaks corresponding to [Si₄]⁴⁻ anions vibrations in BaSi₂ for all films deposited at 400 °C and above. X-ray diffraction analysis showed that randomly-oriented orthorhombic phase of BaSi₂ is achieved with no trace of secondary phases. Also, the crystal quality is enhanced at higher substrate temperatures.

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