Preferred orientation of BaSi2 thin films fabricated by thermal evaporation

Kosuke O. Hara; Cham Thi Trinh; Yoshihiko Nakagawa; Yasuyoshi Kurokawa; Keisuke Arimoto; Junji Yamanaka; Kiyokazu Nakagawa; Noritaka Usami

doi:10.56646/jjapcp.5.0_011202

Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)

Session ID : 011202

DOI https://doi.org/10.56646/jjapcp.5.0_011202

Conference information

Host: The Japan Society of Applied Physics

Name : Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)

Location : Fukuoka, Japan

Date : July 16, 2016 - July 18, 2016

Photovltaic materials

Preferred orientation of BaSi₂ thin films fabricated by thermal evaporation

Kosuke O. Hara, Cham Thi Trinh, Yoshihiko Nakagawa, Yasuyoshi Kurokawa, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami

Author information

Kosuke O. Hara
Center for Crystal Science and Technology, University of Yamanashi, Yamanashi 400-8511, Japan
Cham Thi Trinh
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Yoshihiko Nakagawa
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Yasuyoshi Kurokawa
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Keisuke Arimoto
Center for Crystal Science and Technology, University of Yamanashi, Yamanashi 400-8511, Japan
Junji Yamanaka
Center for Crystal Science and Technology, University of Yamanashi, Yamanashi 400-8511, Japan
Kiyokazu Nakagawa
Center for Crystal Science and Technology, University of Yamanashi, Yamanashi 400-8511, Japan
Noritaka Usami
Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

CONFERENCE PROCEEDINGS OPEN ACCESS

Details

Abstract

Thermal evaporation is a simple and high-speed method to grow a BaSi₂ thin film, which is an emerging candidate for an absorber-layer material of thin-film solar cells. In this study, we have investigated the preferred orientation of BaSi₂ films grown at substrate temperatures of 600–700 °C by thermal evaporation using X-ray diffraction. 2θ–ω scans show that peaks derived from (100) orientation grow steadily with increasing substrate temperature. By X-ray pole figure analysis, the (100)-oriented crystals are proven to be epitaxially grown on Si(100) with two variants. The reason of epitaxial growth is discussed from the epitaxial temperature.

Corresponding author

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