Formation and properties of crystalline BaSi2 thin films obtained by solid phase epitaxy on Si(111)

Dmitry Fomin; Viktor Dubov; Konstantin Galkin; Nikolay Galkin; Rafael Batalov; Vladimir Shustov

doi:10.56646/jjapcp.5.0_011203

Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)

Session ID : 011203

DOI https://doi.org/10.56646/jjapcp.5.0_011203

Conference information

Host: The Japan Society of Applied Physics

Name : Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)

Location : Fukuoka, Japan

Date : July 16, 2016 - July 18, 2016

Photovltaic materials

Formation and properties of crystalline BaSi₂ thin films obtained by solid phase epitaxy on Si(111)

Dmitry Fomin, Viktor Dubov, Konstantin Galkin, Nikolay Galkin, Rafael Batalov, Vladimir Shustov

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CONFERENCE PROCEEDINGS OPEN ACCESS

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Abstract

Barium disilicide may be considered to be a promising material for solar cells. Thin films of BaSi₂ can be developed in various ways. In this paper, we discuss the properties of a barium silicide film obtained by a solid phase epitaxy. GIXRD method showed the presence of BaSi₂ in the film which was obtained at the temperature T = 600, 750 and T = 800 °C. We hypothesize that the co-precipitation of Ba and Si can solve this problem and find that the increase of the annealing temperature results in better film crystallization (for the selected temperature).

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