Temperature and deformation dependence of p-AlxGa1−xAs/GaAs1−yPy/n-AlxGa1−xAs laser diode wavelength and polarization

Evgeny V. Bogdanov; Natalia Ya. Minina

doi:10.56646/jjapcp.6.0_011105

17th Int Conf on High Pressure in Semiconductor Physics (HPSP-17) & Workshop on High Pressure Study on Superconducting (WHS)

セッションID: 011105

DOI https://doi.org/10.56646/jjapcp.6.0_011105

会議情報

主催: HPSP17 & WHS

会議名: 17th Int Conf on High Pressure in Semiconductor Physics (HPSP-17) & Workshop on High Pressure Study on Superconducting (WHS)

開催地: Tokyo, Japan

開催日: 2016/08/07 - 2016/08/11

Temperature and deformation dependence of p-Al_xGa_1−xAs/GaAs_1−yP_y/n-Al_xGa_1−xAs laser diode wavelength and polarization

Evgeny V. Bogdanov, Natalia Ya. Minina

著者情報

会議録・要旨集オープンアクセス

詳細

抄録

Numerical calculations of the optical energy gap and the optical gains g_TE, g_TM of TE and TM polarization modes in p-Al_xGa₁₋_xAs/GaAs_0.84P_0.16/n-Al_xGa₁₋_xAs laser diode structure are carried out for uniaxial compression up to P = 10 kbar along in-plane and normal to a heterostructure directions at temperature interval 77–300 K. The optical energy gap shift under compression is substantially anisotropic and does not change significantly between 77 and 300 K. The g_TM/g_TE ratio is also almost insensitive to the temperature but demonstrates several times decrease under in-plane compression and no change under compression normal to a heterostructure.

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