First Principle Band Calculations of Mg2Si Thin Films with (001) and (110) Orientations

Masahisa Takizawa; Takashi Komine; Haruhiko Udono; Tomosuke Aono

doi:10.56646/jjapcp.8.0_011001

5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019)

Session ID : 011001

DOI https://doi.org/10.56646/jjapcp.8.0_011001

Conference information

Host: The Japan Society of Applied Physics

Name : 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019)

Location : Miyazaki, Japan

Date : July 20, 2019 - July 23, 2019

Thermoelectric materials

First Principle Band Calculations of Mg₂Si Thin Films with (001) and (110) Orientations

Masahisa Takizawa, Takashi Komine, Haruhiko Udono, Tomosuke Aono

Author information

CONFERENCE PROCEEDINGS OPEN ACCESS

Details

Abstract

We investigate the surface band structure in Mg₂Si thin films using the first principle band structure calculations. When the film is stacked along the [001] direction, surface band structures appear inside quantum confinement band structures originates from the bulk band structure. When the film is stacked along the [110] direction, the semiconductor gap retains while a direct band gap appears.

Corresponding author

Register with J-STAGE for free!