JJAP Conference Proceedings
Online ISSN : 2758-2450
5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019)
Session ID : 011201
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Spintronics materials
Effect of Irradiation Atmospheres on the Film Growth of Iron Oxide on Si Substrate by Ion Beam Sputter Deposition Method
K. YamanakaK. Yamaguchi
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CONFERENCE PROCEEDINGS OPEN ACCESS

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Abstract

Fe3O4 thin films of approximately 30 nm in thickness were grown on Si substrate at 573 K by means of ion beam sputter deposition (IBSD) technique, using oxygen or argon ions to sputter Fe3O4 solid target. The effect of these irradiation atmospheres on the chemical composition and crystallinity of the thin films was investigated using XPS (X-ray Photoelectron Spectroscopy), RHEED (Reflection High-Energy Electron Diffraction), and XRD (X-Ray Diffraction). We revealed that the oxygen atmosphere improves the crystallinity of the film as compared with argon atmosphere, but also causes the formation of iron oxide phases other than Fe3O4. On the other hand, the obtained results for Fe3O4 thin films prepared in argon atmosphere had poor crystallinity. Furthermore, the results of RHEED suggested that the preferential growth orientations of the film are different depending on the irradiation atmospheres.

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