Spin-Valve Effects in Fe/N-Doped Carbon/Fe3Si Trilayered Films

Takuya Sakai; Takeru Hamasaki; Kazuki Kudo; Ken-ichiro Sakai; Hiroyuki Deguchi; Tsuyoshi Yoshitake

doi:10.56646/jjapcp.8.0_011202

5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019)

Session ID : 011202

DOI https://doi.org/10.56646/jjapcp.8.0_011202

Conference information

Host: The Japan Society of Applied Physics

Name : 5th Asia-Pacific Conference on Semiconducting Silicides and Related Materials, 2019 (APAC-Silicide 2019)

Location : Miyazaki, Japan

Date : July 20, 2019 - July 23, 2019

Spintronics materials

Spin-Valve Effects in Fe/N-Doped Carbon/Fe₃Si Trilayered Films

Takuya Sakai, Takeru Hamasaki, Kazuki Kudo, Ken-ichiro Sakai, Hiroyuki Deguchi, Tsuyoshi Yoshitake

Author information

CONFERENCE PROCEEDINGS OPEN ACCESS

Details

Abstract

Fe/nitrogen-doped carbon (50 nm)/Fe₃Si tri-layered films were fabricated on Si(111) substrates by physical vapor deposition with a mask method, and the magnetic and electrical properties were investigated. Spin-valve signals were observed in magnetoresistance curves measured in local structure at not only 5 K but also room temperature. It was demonstrated that spin transport in variable hopping is possible for N-doped carbon.

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