Computer Simulation of Anisotropic Etching Process Based on Reaction Mechanism

Finished Profiles at Convex and Concave Corners

Abstract

In anisotropic etching of single crystal silicon, the combination of covex and concave corner mask patterns are often used, however, these finished profiles are damaged due to an effect of corner etching (unexpected etching at corner mask pattern). The present paper has predicted the accuracy of finished profiles with the corner etching process based on the reaction cage effect theory in the previous paper and proposed a new computer simulation algorithm, by which it became possible to evaluate an effect of compensation mask pattern.