Abstract
The effect of the planar defects on the electrical transport properties was investigated in the non-stoichiometric titanium oxide; TiO2-x. TiO2-x with rutile structure is known to have a semiconductor property and planar periodic structure with lattice defects of oxygen vacancies. TiO2-x with point defects and planar defects are synthesized by the reduction of TiO2 and the oxidation of TiO. The defects structure was estimated from the powder XRD patterns. The thermal conductivities were measured using laser flash technique. The electrical properties were measured using the van der Pauw method. The TiO2-x with planar defects showed lower thermal conductivity than those with point defects. In contrast, the TiO2-x with planar defects showed slightly higher carrier nobilities than those with point defects.
