2012 年 59 巻 7 号 p. 405-409
Tianium oxynitride (Ti(O, N)) films were prepared on a Ti(C, N)-based cermet substrate by laser chemical vapor deposition using titanium tetraisopropoxide and NH3 as precursors. A mixture of TiO2 and cubic TiO films was obtained at a deposition temperature of 820 K. Single-phase cubic Ti(O, N) films were prepared at 850-1100 K. With increasing deposition temperature from 850 to 1100 K, the lattice parameter of the Ti(O, N) film increased from 0.4194 to 0.4244 nm, as the N to O ratio in the Ti(O, N) film changed from TiO to TiN. Ti(O, N) films consisted of pyramidal grains with a columnar structure. Ti(O, N) films exhibited higher adhesion at higher deposition temperatures and lower total pressures.