抄録
We have conducted hard X-ray photoemission spectroscopy on FeTiO3 and FeTiO3–Fe2O3 solid solution in order to examine the electronic structure and electrical conduction mechanism of the compounds. The valence band spectrum of FeTiO3–Fe2O3 solid solution manifests a clear peak shift compared to FeTiO3, indicating that the electronic structure of FeTiO3–Fe2O3 solid solution consists of strongly mixed Fe 3d and O 2p components and that the electron correlation of the Fe 3d components is varied by the formation of solid solution between FeTiO3 and α–Fe2O3. We propose that insulating FeTiO3 is converted into semiconductor via this mechanism by the formation of FeTiO3–Fe2O3 solid solution, and the electron transfer between Fe2+ and Fe3+ in C-plane dominantly contributes to the electrical conduction in FeTiO3–Fe2O3 solid solution.