2017 年 64 巻 1 号 p. 23-27
We have fabricated highly crystallized thin films of niobium-doped anatase type titania (Ti1−xNbxO2) to examine the relationship between the electronic transport properties and the plasmonic response. Ti1−xNbxO2 thin films were epitaxially grown on LaTiO3 substrates by using pulsed laser deposition. Attenuated total reflectance spectra in the infrared (IR) region measured using the Otto configuration show a dip for p-polarized light, corresponding to an excitation of surface plasmon polaritons. The IR reflectivity data can be well reproduced by the theoretical calculation based on the Fresnel model, in which the dielectric function of Ti1−xNbxO2 can be modeled by the combination of a Lorentz term and a Drude term. The real part of dielectric function for Ti1−xNbxO2 (x = 0.03) is negative at the wavelengths longer than 2.78 μm in the IR region.