2020 Volume 67 Issue 9 Pages 464-470
This study is reported for the monolithic thermoelectric generator (TEG) which consists of p-type semiconductor, n-type semiconductor, and insulator layers. We used Ni0.9Mo0.1 alloy as a p-type thermoelectric material, (Sr1-x,Lax)TiO3 as an n-type thermoelectric material, and Y2O3-ZrO2 as an insulator. A firmly integrated TEG after co-firing was obtained without delamination by controlling the sintering behavior of the three different materials. The TEG has 36 pairs of p-i-n junction and generates about 100 μW at temperature difference 10°C. After the reliability test (high-temperature storage test, pressure cooker test, and heat shock test), power change rate of the TEG was less than 5%. Wireless sensor node (WSN) using the TEG as a power supply was manufactured. The TEG under a load connected to a circuit was continued generating power for 4600 h at a 120°C heat source and air cooling. During the test, signals were sent from WSN once every 10 s.