Abstract
Epitaxial SiC films grow on α-Al2O3(0001) substrates under the irradiation of UV light from an ArF excimer laser or a deuterium discharge lamp. The irradiation of laser beam is effective to assist the formation of the interface between the SiC film and the Al2O3 substrate. Epitaxial SIC films which are very adhesive to the substrate, are grown at a low temperature. Irradiation to the substrate is essential to these effects. At an initial stage of film growth, nucleation density is increased and the contact between SiC and α-Al2O3 is improved by the irradiation. The irradiation of the light with the wavelength shorter than about 380nm is effective to obtain the adhesive epitaxial films. This wavelength is discordant with the light absorption range for the reaction gases(Si2H6, C2H2), Al2O3 and SIC. The light absorbents which exist only at the substrate surface (as possible examples, SIC clusters and surface states of Al2O3) improve the film growth on the substrate.
