Modification of Evaporated Carbon Film by Ion Implantation

Abstract

A carbon film of 200nm thickness was vacuum-deposited on Si wafer at 573 K. The carbon film was implanted with 280keV Ar⁺ to doses up to 1×10¹⁷/cm². Implantation temperatures were 90 K to 773 K. Raman and XRD studies showed that the as-deposited carbon was graphite-like amorphous carbon, and implantation above 523 K resulted in growth of graphite microcrystals in the film while implantation below 213 K destroyed graphite-like structure in the film.