Preparation of TiO2 Thin Films by Ion Beam Sputtering Method
1991 Volume 38 Issue 3 Pages 444-446
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1991 Volume 38 Issue 3 Pages 444-446
TiO2 thin films were prepared on glass substrates by reactive ion beam sputtering method. A metalic Ti target was sputtered by Ar ion beam, and O2 gas was introduced as reactive gas.
Deposition rate of films increased as ion beam energy became higher. When oxygen partial pressure was 5×10-5Torr or above it, Ti atoms reacted with oxygen, and transparent TiO2 films were obtained. Films deposited on glass substrates at 200°C or above it had crystal structure of the rutile which is the high-temperature stable phase of TiO2. These results suggest the contribution of energy of sputtered particles to decrease of crystallization temperature.
