Synthesis of Complex TiN Thin Films by lon Beam Sputtering Method

Abstract

TiN and complex TiN films doped with small amounts of Al and V were prepared on a glass substrate by the reactive ion beam sputtering method using Ti and Ti-6Al-4V alloy target. The chemical bonding, chemical composition, crystal structure and microstructure were investigated using XPS, XRD and TEM. The results of XPS analysis indicate a clear peak due to chemical bonding of Ti-N, AI-N and V-N respectively. The Ti/N ratio depends much more on the nitrogen partial pressure than on substrate temperature, and the nitrogen partial pressure in excess of 5×10^-5 Torr is necessary to prepare films with Ti/N=1. It suggest the effect of sputtered Particles's energy that crystalline TiN films were obtained on conditions of substrate temperature 25 °C and nitrogen partial pressure 5×10^-5 Torr. The results of TEM analysis clearly indicate that crystal growth in TIN is inhibited by doping with small amounts of Al and V.