抄録
Iron garnet thin films containing large amount of Bi were prepared by sputtering method, and their thermal stability has been investigated. Firstly, amorphous oxide films were deposited with targets having the composition of BixY3-xFe5O12 (x=0.0, 1.0, 1.5 and 2.0), and the films were annealed to form a garnet phase at 500-1000°C for 4h in air. The MS of the Bi containing films began rising at 600-650°C, and increased with annealing temperature. Then the MS decreased above 800°C and disappeared at about 900°C. The MS of the films with x=0.0 (YIG film) proceeded up at 700°C and showed a large value over 100 emu/cm3 at 1000°C. At the annealing temperatures over 800°C, non-magnetic crystalline phases were detected with the Bi containing films, and at 900°C the garnet diffraction peaks were disappeared.
