Boron-rich silicon borides were prepared by solid state reaction and arc-melting using boron and silicon powders. Rhombohedral SiB ?? phase in which n ranged from 15 to 49 was obtained. The lattice parameters, a and c, of SiB ?? increased with increasing Si content. The specimens obtained by arc-melting consisted of Si and SiB ?? . A quick cooling process caused the Si formation. The thermal conductivity, electrical conductivity and Seebeck coefficient of the arc-melted materials were measured. The ZT value increased with temperature, and was about 0.1 at 1200K.
