抄録
The exaggerated grain growth of ZnO in the low voltage ZnO varistor was investigated. At a temperature exceeds 1000°C in the sintering process, many thin films were formed in the sintered body which contained TiO2 and Bi2O3. The ZnO grain seemed to grow epitaxially with the thin film. XMA and powder X-ray diffraction analysis suggest that the thin films are Bi4Ti3O12. The growth of the thin films depended on the amount of Al2O3additive. Then the exaggerated grain growth of ZnO was under the control of small amount of Al2O3additive.
