抄録
Boron-containing Si-C-N-H polymers were fabricated. Amorphous ceramics were derived from the poly(silazane) and other organic polymer precursors. The precursor routes in this paper showed high ceramic yields in the range of 60 to 80%. Crystallization behavior of the boron-containing Si-C-N ceramics was investigated. The main crystalline phase was β-SiC. Crystalline size of the β-SiC decreased with increasing boron contents in the ceramics. And the X-ray intensity of the β-SiC also decreased with them. Heat treatment at 2373K in N2 atmosphere introduced both β-SiC and free silicon, in the boron free Si-C-N ceramics and 1.6wt% boron-containing Si-C-N ceramics. 5.5wt% boron-containing Si-C-N ceramics showed crystalline phase of β-SiC and Si3N4. Boron may act as an inhibitant of both crystallization and decomposition of silicon nitride at high temperatures.
