Abstract
It was reported that electromagnetic properties of the multilayer chip ferrite components are influenced by the internal stresses and the diffusion of Ag buried in ferrite. As the magnetostriction of MgCuZn ferrites is lower than that of NiCuZn ferrites, it was expected that the multilayer chip inductor using MgCuZn ferrite would obtain higher magnetic properties than that using NiCuZn ferrite. Therefore MgCuZn ferrites with the low sintering temperature have been developed as the materials for the multilayer chip ferrite components. Under a compressive stress, the change in permeability of low temperature sintering MgCuZn ferrite was lower than that of low temperature sintering NiCuZn ferrite. Moreover, one might expected that the multilayer chip inductor using low temperature sintering MgCuZn ferrite would show a higher inductance than the chip using low temperature sintering NiCuZn ferrite. It is thought that low temperature sintering MgCuZn ferrite has the high potentialities of useful materials in the multilayer chip ferrite components, not only the multilayer chip inductors but also the multilayer LC and EMI chip filter components.
