抄録
The oxidation behavior of α-SiC powders at elevated temperature was studied by using a TG (thermo-gravimetry) analyzer. Oxidation reactions were observed at two temperature regions. First one is due to the oxidation of free carbon around 700°C, and the other is caused by the oxidation of α-SiC particle surface around 1000°C. The oxidation starting temperature and the amount of oxidation product (SiO2) depend on the size of α-SiC particles. It was found that the starting temperature of the oxidation decreases with the particle size. The amounts of oxidation product increase with the decrease of particle size as well. It is concluded that the oxidation rate at around 1000°C is constant since the values of oxidation amount per unit area is almost uniform independent of the particle size of α-SiC powders.
