High Power and High Efficiency Semipolar InGaN Light Emitting Diodes

Hitoshi SATO; Hirohiko HIRASAWA; Hirokuni ASAMIZU; Natalie FELLOWS; Anurag TYAGI; Makoto SAITO; Kenji FUJITO; James S. SPECK; Steven P. DENBAARS; Shuji NAKAMURA

doi:10.2150/jlve.32.107

Papers

High Power and High Efficiency Semipolar InGaN Light Emitting Diodes

Hitoshi SATO, Hirohiko HIRASAWA, Hirokuni ASAMIZU, Natalie FELLOWS, Anurag TYAGI, Makoto SAITO, Kenji FUJITO, James S. SPECK, Steven P. DENBAARS, Shuji NAKAMURA

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Keywords: GaN, InGaN, nonpolar, semipolar, light emitting diode, blue LED, green LED

JOURNAL FREE ACCESS

2008 Volume 32 Issue 2 Pages 107-110

DOI https://doi.org/10.2150/jlve.32.107

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Abstract

We demonstrate high power blue and green InGaN/GaN multiple-quantum-well (MQW) light emitting diodes (LEDs) grown on low extended defect density semipolar (10 1 1) and (11 2 2) bulk GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency (EQE) at 20 mA under pulsed operation (10 % duty cycle) were 19.7 mW and 34.4 % for the blue LED and 9.0 mW and 18.9 % for the green LED, respectively. The blue LED showed <1 nm red-shift with change in drive current from 1 - 200 mA, indicating a significant reduction of polarization related internal electric fields.

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