Selective Area Growth of III-Nitride and Their Application for Emitting Devices

Abstract

In this paper, the high quality AlGaN with high-Al content was grown on in-situ monitoring controlled selective area growth (SAG) GaN and the dislocation density of AlGaN is 1-3×10⁸ cm^-2. Furthermore, we use SAG to fabricate InGaN/GaN pyramid structures. CL (Cathodoluminescence) measurements reveal that the thickness, CL peak wavelength and CL intensity gradually increased from the bottom to the top of the facet. Furthermore, Vacuum fluorescent display (VFD) based on InGaN/GaN pyramid structures was demonstrated.