Nano-pendeo GaN Growth of Light Emitting Devices on Silicon

Wang Nang WANG; C. LIU; A. GOTT; S. DENCHITCHAROEN; P. SHIELDS; L. MESHI; S. KHONGPHETSAK; I. GRIFFITHS; D. CHERNS; R. CAMPION

doi:10.2150/jlve.32.187

Papers

Nano-pendeo GaN Growth of Light Emitting Devices on Silicon

Wang Nang WANG, C. LIU, A. GOTT, S. DENCHITCHAROEN, P. SHIELDS, L. MESHI, S. KHONGPHETSAK, I. GRIFFITHS, D. CHERNS, R. CAMPION

Author information

Wang Nang WANG
Department of Electronic and Electrical Engineering, University of Bath
C. LIU
Department of Electronic and Electrical Engineering, University of Bath
A. GOTT
Department of Electronic and Electrical Engineering, University of Bath
S. DENCHITCHAROEN
Department of Electronic and Electrical Engineering, University of Bath
P. SHIELDS
Department of Electronic and Electrical Engineering, University of Bath
L. MESHI
H. H. Wills Physics Laboratory, University of Bristol
S. KHONGPHETSAK
H. H. Wills Physics Laboratory, University of Bristol
I. GRIFFITHS
H. H. Wills Physics Laboratory, University of Bristol
D. CHERNS
H. H. Wills Physics Laboratory, University of Bristol
R. CAMPION
Department of Physics, Nottingham University

Keywords: GaN, nano-pendeo, light emitting diodes, Silicon

JOURNAL FREE ACCESS

2008 Volume 32 Issue 2 Pages 187-190

DOI https://doi.org/10.2150/jlve.32.187

Details

Abstract

This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction and stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.

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