Journal of Light & Visual Environment
Online ISSN : 1349-8398
Print ISSN : 0387-8805
ISSN-L : 0387-8805
Papers
Nano-pendeo GaN Growth of Light Emitting Devices on Silicon
Wang Nang WANGC. LIUA. GOTTS. DENCHITCHAROENP. SHIELDSL. MESHIS. KHONGPHETSAKI. GRIFFITHSD. CHERNSR. CAMPION
Author information
JOURNAL FREE ACCESS

2008 Volume 32 Issue 2 Pages 187-190

Details
Abstract

This paper presents the results using an alternative defects and strain minimizing technique with nanostructures as the compliant layer to grow III-V nitrides onto foreign substrates. Defects reduction and stress relaxation had been observed through HRTEM on GaN grown on sapphire and silicon. Results of LED devices on silicon with performance compatible with those on sapphire are presented.

Related papers from these authors
© 2008 The Illuminating Engineering Institute of Japan
Previous article Next article
feedback
Top