Papers
Realization of 340nm-Band High-Power UV-LED Using P-Type Inalgan
2008 年 32 巻 2 号 p. 83-87
詳細
2008 年 32 巻 2 号 p. 83-87
High output power 340 nm-band InAlGaN-based multi-quantum-well (MQW) ultraviolet (UV) light-emitting diodes (LEDs) were achieved by using p-type InAlGaN layers. The output power of a UV-LED with p-type InAlGaN layers was approximately 4.7 times larger than that achieved with p-type AlGaN layers. We obtained an output power of 8.4mW from a 346 nm InAlGaN-QW LED by optimizing the band line-up to suppress electron overflow and by reducing the threading dislocation density (TDD) of the AlN/AlGaN template.
