イオン注入された(100), (110)磁性ガーネット膜の磁気異方性

抄録

Anisotropy changes caused by He⁺ or H₂⁺ implantations on (100), (110) and (111) magnetic garnet films have been studied. In (100) films, quite in contrast to (111) films, uniaxial anisotropy field changes were almost the same for He⁺ and H₂⁺ implantations. In (110) films, orthorhombic anisotropy parameter B for H₂⁺ implantations changed greatly, which is consistent with anisotropy change for (111) films. The change in parameter A for He⁺ implanted (110) films was in the same order as for H₂⁺ implantations. Magnetocrystalline anisotropy K₁ in H₂⁺ implanted films was determined from the angular dependence of (100) inplane resonance fields. The sign of K₁ changed to positive by H₂⁺ implantations. It was found that H₂⁺ implantations have a great effect λ₁₁₁ and K₁ but have little influence on λ₁₀₀.