抄録
The effects of H2, O2 and N2 additives on the magnetic properties of Co-Cr film were studied for high rate sputtering. O2 and N2 react with Co-Cr to from compounds. N2 addition induces fcc <200> orientation perpendicular to the film plane, and hence causes a drastic decrease of the perpendicular anisotropy field Hk, accompanied by hcp <002> orientation degradation. O2 is most reactive to Co-Cr, but little affects the crystal structure. These effects become less at higher deposition rate for the same introduced pressure. In contrast, H2 does not react with Co-Cr at all, but has a unique role of changing the coercive force without any change of Hk or crystal orientation. The effects of N2 and H2 are concluded respectively equivalent to that of increase and decrease of substrate temperature.
