スピン波共鳴によるイオン注入層の評価

抄録

Relationship between surface mode perpendicular ferromagnetic resonance (spin wave resonance) spectrum patterns and anisotropy field profiles has been studied for ion-implanted garnet films. Implantation depth markedly changes the mode of the spectrum. Profile of anisotropy field H_k mainly changes the line position at high external field region. On the contrary, H_k profile at boundary region between implated and un-implanted layer changes the line position at low field (near the main body mode). Existence of an extremely large H_k, region in the profile produces ‘trapped modes’ which appear separately at high field. Examples of spin wave resonance spectrum for H₂⁺ implanted Bi-substituted garnet films for 1 μm bubble devices are also shown. It is possible to monitor the ion-implantation process by measuring the spectrum.