Abstract
Fe-N films were deposited directly on GaAs(100) and In0.2Ga0.8As(100) substrates by evaporating Fe in a mixture of N2 and NH3 gases. It was found that epitaxial growth of Fe16N2 directly on these substrates was possible using this mixed gas. In the case of In0.2Ga0.8As substrates, Fe-N film with a saturation magnetic flux density of 2.9 T was obtained with a growth rate of 0.034Å/s, gas pressure of 5×10-5 Torr, and substrate temperature of 150°C. The growth rate was approximately five times faster than when using pure N2 gas.
