Fe-N films were deposited directly on GaAs(100) and In
0.2Ga
0.8As(100) substrates by evaporating Fe in a mixture of N
2 and NH
3 gases. It was found that epitaxial growth of Fe
16N
2 directly on these substrates was possible using this mixed gas. In the case of In
0.2Ga
0.8As substrates, Fe-N film with a saturation magnetic flux density of 2.9 T was obtained with a growth rate of 0.034Å/s, gas pressure of 5×10
-5 Torr, and substrate temperature of 150°C. The growth rate was approximately five times faster than when using pure N
2 gas.
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