Journal of the Magnetics Society of Japan
Online ISSN : 1880-4004
Print ISSN : 0285-0192
ISSN-L : 0285-0192
Volume 15, Issue 1
Displaying 1-3 of 3 articles from this issue
Papers
  • F. Sato, T. Miyazaki
    1991 Volume 15 Issue 1 Pages 47-52
    Published: February 28, 1991
    Released on J-STAGE: January 11, 2013
    JOURNAL OPEN ACCESS
      The dependence of the size of crystallites and permeability on the thickness of the magnetic layer and annealing temperature was studied for Fe/ZnO and 50Fe45Ni5Nb/ZnO multilayer films. The permeability of Fe/ZnO multilayer film (8/5 nm)×15 annealed at 623 K for 1 h is 1700. The permeability of 50Fe45Ni5Nb/ZnO multilayer film (90/5 nm)×1 annealed at 723 K for 1 h is 3000 and saturation magnetic flux density is approximately 16 kG. The permeability exhibits a maximum between 10 to 20 nm of average size of crystallites for both Fe/ZnO and 50Fe45Ni5Nb/ZnO multilayers, suggesting the important role of crystalline size for the softness of magnetic films. In the case of the latter film, the (111) prefered orientation enlarges the permeability in addition to the effect of crystalline size.
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  • S. Tanaka, F. Tanaka, S. Suzuki
    1991 Volume 15 Issue 1 Pages 53-58
    Published: February 28, 1991
    Released on J-STAGE: January 11, 2013
    JOURNAL OPEN ACCESS
      The recording and reproducing processes in magneto-optical disk were simulated by means of a new calculation model to study the dependence of the magnetic field modulation recording property on magnetic properties of the recording medium. It was confirmed that the dependence of the carrier on the intensity of the recording magnetic field is much affected by the demagnetizing field during the recording process due to the magnetization around the spot irradiated with a laser beam and that a lower magnetic field is enough in the medium which has a composition close to the compensation composition than in the medium with TM-rich composition. It was in good agreement with experimental results.
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  • Y. KOZONO, M. KOMURO, M. HANAZONO, Y. SUGITA
    1991 Volume 15 Issue 1 Pages 59-62
    Published: February 28, 1991
    Released on J-STAGE: January 11, 2013
    JOURNAL OPEN ACCESS
      Fe-N films were deposited directly on GaAs(100) and In0.2Ga0.8As(100) substrates by evaporating Fe in a mixture of N2 and NH3 gases. It was found that epitaxial growth of Fe16N2 directly on these substrates was possible using this mixed gas. In the case of In0.2Ga0.8As substrates, Fe-N film with a saturation magnetic flux density of 2.9 T was obtained with a growth rate of 0.034Å/s, gas pressure of 5×10-5 Torr, and substrate temperature of 150°C. The growth rate was approximately five times faster than when using pure N2 gas.
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