アモルファス磁性ワイヤのMatteucci効果の発生機構

抄録

  Mechanism of sensitive Matteucci effect in negative-magnetostrictive amorphous wires was qualitatively clarified considering their magnetic domain model and using measurements of BH hysteresis loops regarding their circular magnetization. Three kinds of amorphous wires of FeSiB, CoSiB and FeCoSiB having diameter of 120-μm and 50-μm were investigated. It was found that the Matteucci voltage was determined by the differential permeability of the BH hysteresis loops which showed the highest value in a slightly negative magnetostrictive FeCoSiB wire (λ_s=0.1×10^-6). Variation characteristics of the Matteucci voltage for applied tension and annealing are also explained using the BH characteristics. Three kinds of Matteucci effects were expressed applying (i) an ac wire current, (ii) a perpendicular ac field and (iii) a high frequency wire current and a low frequency perpendicular ac field. These effects are the basis for the constitution of a new data tablet and new rotary encoder.