膜厚変調ビット国定パターンによるブロッホライン対の磁界転送特性

抄録

A New bit cofinement method using film thickness modulation (FTM) has been studied on the Bloch-line (BL) memory to make the BL pair propagation cmmon to both sides of the stripe domain wall. Since it is necessary to make the modulation pattern edge smooth for low drive-field propagation, we used tapered resist patterns for the ion milling mask and carried out the milling to fabricate 100 nm thickness modulation in an O₂ atmosphere (10^-6 Torr). BL pair propagation was tested with applying the trianglar bias pulsed field with 100 ns rise time and 1000 ns fall time. It was found that the drive field margins did not depend on the propagation direction, because the bit confinement force acts symmetrically on both sides of the domain wall. Furthermore, it was confirmed that the temperature dependece of the drive field margin was larger than that in the conventonal magnetic pattern method.