抄録
In order to obtain a ferromagnetic Mn-Al film with a single τ-phase, sputtering conditions such as the argon pressure, the composition of target, and the annealing temperature were investigated systematically. Mn-Al film with a saturation magnetization of 82 emu/g was formed only by sputtering at about 10-Pa argon pressure and subsequent annealing at about 573 K. The intensity of the magnetization was nearly the same as that of a bulk sample.
