高抵抗Fe-M-O(M=Hf, Zr)膜の微細組織と結晶化挙動

抄録

The microstructures, crystallization behavior, and electrical resistivities of Fe-M-O (M=Hf, Zr) films prepared by the rf magnetron sputtering technique were investigated. In an as-deposited state, the structures of F-M-O films with a solute content of 13 to 22.7 at%Hf and 15 to 38 at%O or 5 to 13 at%Zr and 8 to 30 at%O were found to be composed of a bcc phase with a diameter below 10 nm and an amorphous phase containing larger amounts of M and O elements. The films crystallizes in two stages, corresponding to the precipitation and grain growth of the bcc phase and of oxides, respectively. The region of the amorphous phase in the films expanded with increasing M content, and the electrical resistivity rapidly increased and reached 1860 μΩm for a Fe_46.2Hf_18.2O_35.6 with a structure composed of a large region in an amorphous phase and a small part of a bcc phase.