抄録
A thin-film microtransformer and a microinductor were fabricated, using photolithography techniques during all processes. The microtransformer and the microinductor are the same size, 3.5 × 3.9 × 0.06 mm3, and both have a layered structure with circular spiral windings between the upper and lower CoFe-SiB films. The microtransformer and the microinductor were mounted on a primary controlled forward converter, and the converter was operated in a high frequency range of 6 to 10 MHz with a load resistance of 51 Ω, and an output voltage of 1.9 V was obtained for an input voltage of 6 V. This result is important as a first step toward developing a microconverter in which transformers, inductors, capacitors, and rectifier diodes are integrated monolithically.
