抄録
Preparation conditions of ultra thin Fe-Si-N films for a single-pole type head have been investigated by using an rf sputtering with N2 addition. High frequency (10MHz) permeabilities of 2000 - 3000 have been obtained for sheet films with a small anisotropy dispersion by controlling the N2 quantity. High frequency permeability of strip patterned samples was also investigated. The Fe-Si-N/Si3N4 multi-layer stacked with ultra thin sheet films shows higher permeability than that of an Fe-Si-N single layer when the strips width is narrower than 20 μm. This may be attributed to the reduction of the demagnetization at the strip side edges.