This study reports on the performance of a thin-film magnetic sensor that uses impedance change at a high frequency. A closed magnetic circuit, a strip pattern for the magnetic films, and an NiFe/SiO2 multilayer film structure were adopted for high sensitivity and large voltage change. A voltage change ratio of 50-60% was achieved by applying an external field of several Oe with an AC carrier of ∼800 MHz. The sensor was confirmed to perceive a highfrequency external field as an amplitude modulation of the AC carrier voltage, and exhibited broad frequency bandwidth, high linearity, and no hysteresis or Barkhausen noise.
