抄録
In order to make a stress-insensitive amorphous wire for use in pen-input data tablets, the stress sensitivity of the vertical Matteucci effect was investigated by annealing the wire. First, the magnetostriction was measured for tensionannealed FeCoSiB amorphous wires, using the magnetization rotation measurement technique. It was found that the magnetostriction of amorphous wires, which was initially slightly negative, became positive with an increase in the annealing temperature and then became negative again in a higher-annealing-temperature region. Next, the stress sensitivity of the vertical Matteucci voltage in the tensionannealed wires was measured for applied tensile stresses of up to 100 kg/mm2. The mechanism of the stress sensitivity of the Matteucci voltage is discussed with reference to circumferential BH hysteresis loop measurements. Finally, an optimal annealing condition was found in which a high Matteucci voltage was realized without any remarkable change in response to applied tensile stresses.
