高 Ar ガス圧力作製 Co-Cr スパッタ膜の酸エッチングモード

抄録

Etching modes obtained by immersion in diluted acid were studied for Co-Cr films deposited under various sputtering conditions. It was found that the films deposited at a higt Ar pressure of 70 Pa exhibited a much lower etching rate than films deposited at a lower pressure. The lowest etching rate was obtained for films deposited at 70 Pa and at room temperature. The origins of etching modes are discussed in terms of the microstructure and Cr micro- segregation in the films, along with the changes in the magnetic properties of the films.