ORIENTED BARIUM, STRONTIUM FERRITE FILMS PULSED LASER DEPOSITED ON YSZ(100) AND Si(100) SUBSTRATES

抄録

  Ba and Sr hexaferrite films with perpendicular magnetic anisotropy were deposited on YSZ (100) and Si (100) substrates. Films on YSZ were highly oriented and grew by a spiral mechanism similar to that observed for growth on sapphire (0001). An obstacle to oriented growth on Si was its amorphous surface oxide. Substantial improvement in the texturing of the films was achieved by removing the Si oxide prior to deposition and carrying out the initial stage of growth in a reduced oxygen atmosphere.